Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
21-24 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.21 |
| Citation |
Atsuto Okamoto et al., 1998, Materials Science Forum, 264-268, 21 |
| Online since |
February, 1998 |
| Authors |
Atsuto Okamoto, Naohiro Sugiyama, Toshihiko Tani, Nobuo Kamiya |
| Keywords |
Micropipe, Nitrogen Doping, Polarity, Polytype, Power Device, SiC Single Crystal, Step Structure, Subgrain Boundary, Sublimation Method |
| Full Paper |
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