Paper Title:
Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
215-218
DOI
10.4028/www.scientific.net/MSF.264-268.215
Citation
J.K.N. Lindner, W. Reiber, B. Stritzker, "Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon", Materials Science Forum, Vols. 264-268, pp. 215-218, 1998
Online since
February 1998
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Price
$32.00
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