Fabrication of 3C-SiC on SiO2 Structures Using Wafer Bonding Techniques |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
223-226 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.223 |
| Citation |
Christian A. Zorman et al., 1998, Materials Science Forum, 264-268, 223 |
| Online since |
February, 1998 |
| Authors |
Christian A. Zorman, K.N. Vinod, A.A. Yasseen, Mehran Mehregany |
| Keywords |
APCVD, Defect Density, Mechanical Polishing, Poly-Silicon, SiO2, Wafer Bonding |
| Full Paper |
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