Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100) Substrate |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
227-230 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.227 |
| Citation |
Gabriel Ferro et al., 1998, Materials Science Forum, 264-268, 227 |
| Online since |
February, 1998 |
| Authors |
Gabriel Ferro, H. Vincent, Yves Monteil, Didier Chaussende, J. Bouix |
| Keywords |
Chemical Vapor Deposition (CVD), Epitaxy, Kinetics, Silicon |
| Full Paper |
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