Paper Title:
Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System
  Abstract

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Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
235-238
DOI
10.4028/www.scientific.net/MSF.264-268.235
Citation
T. Hatayama, T. Fuyuki, H. Matsunami, "Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System", Materials Science Forum, Vols. 264-268, pp. 235-238, 1998
Online since
February 1998
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