Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
239-242 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.239 |
| Citation |
Jin Ming Chen et al., 1998, Materials Science Forum, 264-268, 239 |
| Online since |
February, 1998 |
| Authors |
Jin Ming Chen, A.J. Steckl, Mark J. Loboda |
| Keywords |
Molecular Beam Epitaxy (MBE), Silacyclobutane, Silicon, Silicon Carbide (SiC) |
| Full Paper |
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