Paper Title:
Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
251-254
DOI
10.4028/www.scientific.net/MSF.264-268.251
Citation
J. Pezoldt, T. Stauden, V. Cimalla, G. Ecke, H. Romanus, G. Eichhorn, "Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy", Materials Science Forum, Vols. 264-268, pp. 251-254, 1998
Online since
February 1998
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.