X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals |
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| Journal | Materials Science Forum (Volumes 264 - 268) |
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| Volume | Silicon Carbide, III-Nitrides and Related Materials |
| Edited by | G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages | 29-32 |
| DOI | 10.4028/www.scientific.net/MSF.264-268.29 |
| Online since | February, 1998 |
| Authors | S. Milita, R. Pons, J. Baruchel, A. Mazuelas |
| Keywords | Crystal Growth, X-Ray Section Topography |
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