X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
29-32 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.29 |
| Citation |
S. Milita et al., 1998, Materials Science Forum, 264-268, 29 |
| Online since |
February, 1998 |
| Authors |
S. Milita, R. Pons, J. Baruchel, A. Mazuelas |
| Keywords |
Crystal Growth, X-Ray Section Topography |
| Full Paper |
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