Paper Title:
X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
29-32
DOI
10.4028/www.scientific.net/MSF.264-268.29
Citation
S. Milita, R. Pons, J. Baruchel, A. Mazuelas, "X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals", Materials Science Forum, Vols. 264-268, pp. 29-32, 1998
Online since
February 1998
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Price
$32.00
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