Paper Title:

Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals

Periodical Materials Science Forum (Volumes 264 - 268)
Main Theme Silicon Carbide, III-Nitrides and Related Materials
Edited by G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages 33-36
DOI 10.4028/www.scientific.net/MSF.264-268.33
Citation Stephan G. Müller et al., 1998, Materials Science Forum, 264-268, 33
Online since February, 1998
Authors Stephan G. Müller, Robert Eckstein, Wolfgang Hartung, Dieter Hofmann, M. Kölbl, Gerhard Pensl, Erwin Schmitt, Arnd Dietrich Weber, Albrecht Winnacker
Keywords Dislocation, Dopant Incorporation, Etch-Pit-Density, Micropipe, Stress Birefringence
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