Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
33-36 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.33 |
| Citation |
Stephan G. Müller et al., 1998, Materials Science Forum, 264-268, 33 |
| Online since |
February, 1998 |
| Authors |
Stephan G. Müller, Robert Eckstein, Wolfgang Hartung, Dieter Hofmann, M. Kölbl, Gerhard Pensl, Erwin Schmitt, Arnd Dietrich Weber, Albrecht Winnacker |
| Keywords |
Dislocations, Dopant Incorporation, Etch-Pit-Density, Micropipe, Stress Birefringence |
| Full Paper |
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