Paper Title:
Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
33-36
DOI
10.4028/www.scientific.net/MSF.264-268.33
Citation
S. G. Müller, R. Eckstein, W. Hartung, D. Hofmann, M. Kölbl, G. Pensl, E. Schmitt, A. D. Weber, A. Winnacker, "Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals", Materials Science Forum, Vols. 264-268, pp. 33-36, 1998
Online since
February 1998
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Price
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