Paper Title:
AFM Study of In Situ Etching of 4H and 6H SiC Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
363-366
DOI
10.4028/www.scientific.net/MSF.264-268.363
Citation
S. Karlsson, N. Nordell, "AFM Study of In Situ Etching of 4H and 6H SiC Substrates", Materials Science Forum, Vols. 264-268, pp. 363-366, 1998
Online since
February 1998
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Price
$32.00
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