Paper Title:
Raman Investigation of Stress Relaxation at the 3C-SiC/Si Interface
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
395-398
DOI
10.4028/www.scientific.net/MSF.264-268.395
Citation
J. M. Bluet, L.A. Falkovsky, N. Planes, J. Camassel, "Raman Investigation of Stress Relaxation at the 3C-SiC/Si Interface", Materials Science Forum, Vols. 264-268, pp. 395-398, 1998
Online since
February 1998
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.