Paper Title:
Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (000-1) Carbon Faces
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
409-412
DOI
10.4028/www.scientific.net/MSF.264-268.409
Citation
J. Stoemenos, L. Di Cioccio, V. Papaioannou, D. David, C. Pudda, "Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (000-1) Carbon Faces", Materials Science Forum, Vols. 264-268, pp. 409-412, 1998
Online since
February 1998
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Price
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