Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
413-416 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.413 |
| Citation |
P.O.Å. Persson et al., 1998, Materials Science Forum, 264-268, 413 |
| Online since |
February, 1998 |
| Authors |
P.O.Å. Persson, Qamar-ul Wahab, L. Hultman, Nils Nordell, Adolf Schöner, K. Rottner, E. Olsson, Margareta K. Linnarsson |
| Keywords |
Boron Implantation, Boron Precipitates, Electron Microscopy, Elemental Mapping, Planar Defects |
| Full Paper |
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