Paper Title:
Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering
  Abstract

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Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
449-454
DOI
10.4028/www.scientific.net/MSF.264-268.449
Citation
H. Harima, T. Hosoda, S. Nakashima, "Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering", Materials Science Forum, Vols. 264-268, pp. 449-454, 1998
Online since
February 1998
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Price
$32.00
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