Paper Title:
Bound Exciton Recombination in Electron Irradiated 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
477-480
DOI
10.4028/www.scientific.net/MSF.264-268.477
Citation
T. Egilsson, A. Henry, I. G. Ivanov, J. L. Lindström, E. Janzén, "Bound Exciton Recombination in Electron Irradiated 4H-SiC", Materials Science Forum, Vols. 264-268, pp. 477-480, 1998
Online since
February 1998
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Price
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