Paper Title:
Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
481-484
DOI
10.4028/www.scientific.net/MSF.264-268.481
Citation
M. Tajima, Y. Kumagaya, T. Nakata, M. Inoue, A. Nakamura, "Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping", Materials Science Forum, Vols. 264-268, pp. 481-484, 1998
Online since
February 1998
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.