Paper Title:
Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
49-52
DOI
10.4028/www.scientific.net/MSF.264-268.49
Citation
N. Ohtani, M. Katsuno, J. Takahashi, H. Yashiro, M. Kanaya, S. Shinoyama, "Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC", Materials Science Forum, Vols. 264-268, pp. 49-52, 1998
Online since
February 1998
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Price
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