Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
49-52 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.49 |
| Citation |
Noboru Ohtani et al., 1998, Materials Science Forum, 264-268, 49 |
| Online since |
February, 1998 |
| Authors |
Noboru Ohtani, Masakazu Katsuno, J. Takahashi, Hirokatsu Yashiro, M. Kanaya, S. Shinoyama |
| Keywords |
Atomic Force Microscope (AFM), Impurity Incorporation, Sublimation Bulk Growth |
| Full Paper |
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