Paper Title:
Deep Levels in SiC:V by High Temperature Transport Measurements
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
545-548
DOI
10.4028/www.scientific.net/MSF.264-268.545
Citation
W.C. Mitchel, R. Perrin, J. Goldstein, M. D. Roth, M. Ahoujja, S.R. Smith, A.O. Evwaraye, J.S. Solomon, G. Landis, J. R. Jenny, H. McD. Hobgood, G. Augustine, V. Balakrishna, "Deep Levels in SiC:V by High Temperature Transport Measurements", Materials Science Forum, Vols. 264-268, pp. 545-548, 1998
Online since
February 1998
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.