Paper Title:
Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
549-552
DOI
10.4028/www.scientific.net/MSF.264-268.549
Citation
M.B. Scott, J. D. Scofield, Y.K. Yeo, R.L. Hengehold, "Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy", Materials Science Forum, Vols. 264-268, pp. 549-552, 1998
Online since
February 1998
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Price
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