Paper Title:
Oxygen-Related Defect Centers in 4H Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
553-556
DOI
10.4028/www.scientific.net/MSF.264-268.553
Citation
T. Dalibor, G. Pensl, T. Yamamoto, T. Kimoto, H. Matsunami, S.G. Sridhara, D.G. Nizhner, R. P. Devaty, W. J. Choyke, "Oxygen-Related Defect Centers in 4H Silicon Carbide", Materials Science Forum, Vols. 264-268, pp. 553-556, 1998
Online since
February 1998
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Price
$32.00
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