Paper Title:
Electrically Active Defects in n-Type 4H- and 6H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
565-568
DOI
10.4028/www.scientific.net/MSF.264-268.565
Citation
J.P. Doyle, L. Swadźba, B. G. Svensson, "Electrically Active Defects in n-Type 4H- and 6H-SiC", Materials Science Forum, Vols. 264-268, pp. 565-568, 1998
Online since
February 1998
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Price
$35.00
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