Paper Title:
Electrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa Diodes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
573-576
DOI
10.4028/www.scientific.net/MSF.264-268.573
Citation
A. Czerwinski, J. Ratajczak, J. Katcki, A. Bakowski, M. Bakowski, "Electrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa Diodes", Materials Science Forum, Vols. 264-268, pp. 573-576, 1998
Online since
February 1998
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Price
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