Paper Title:
On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
591-594
DOI
10.4028/www.scientific.net/MSF.264-268.591
Citation
B.K. Meyer, A. Hofstätter, P.G. Baranov, "On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?", Materials Science Forum, Vols. 264-268, pp. 591-594, 1998
Online since
February 1998
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.