Paper Title:
ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
615-618
DOI
10.4028/www.scientific.net/MSF.264-268.615
Citation
D. B. Cha, H. Itoh, N. Morishita, A. Kawasuso, T. Ohshima, Y. Watanabe, J. Ko, K. K. Lee, I. Nashiyama, "ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons", Materials Science Forum, Vols. 264-268, pp. 615-618, 1998
Online since
February 1998
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Price
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