Paper Title:
A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
665-668
DOI
10.4028/www.scientific.net/MSF.264-268.665
Citation
V. Madangarli, T. S. Sudarshan, "A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors", Materials Science Forum, Vols. 264-268, pp. 665-668, 1998
Online since
February 1998
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.