Conductivity Control of SiC by In-Situ Doping and Ion Implantation |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
675-680 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.675 |
| Citation |
Tsunenobu Kimoto et al., 1998, Materials Science Forum, 264-268, 675 |
| Online since |
February, 1998 |
| Authors |
Tsunenobu Kimoto, A. Itoh, N. Inoue, O. Takemura, T. Yamamoto, T. Nakajima, Hiroyuki Matsunami |
| Keywords |
Chemical Vapor Deposition (CVD), Conductivity Control, In Situ Impurity Doping, Ion-Implantation, pn Junction Diode |
| Full Paper |
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