Paper Title:
Conductivity Control of SiC by In-Situ Doping and Ion Implantation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
675-680
DOI
10.4028/www.scientific.net/MSF.264-268.675
Citation
T. Kimoto, A. Itoh, N. Inoue, O. Takemura, T. Yamamoto, T. Nakajima, H. Matsunami, "Conductivity Control of SiC by In-Situ Doping and Ion Implantation", Materials Science Forum, Vols. 264-268, pp. 675-680, 1998
Online since
February 1998
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Price
$32.00
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