Paper Title:
Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
681-684
DOI
10.4028/www.scientific.net/MSF.264-268.681
Citation
T. Frank, T. Troffer, G. Pensl, N. Nordell, S. Karlsson, A. Schöner, "Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy", Materials Science Forum, Vols. 264-268, pp. 681-684, 1998
Online since
February 1998
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Price
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