Paper Title:

Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation

Periodical Materials Science Forum (Volumes 264 - 268)
Main Theme Silicon Carbide, III-Nitrides and Related Materials
Edited by G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages 689-692
DOI 10.4028/www.scientific.net/MSF.264-268.689
Citation Kiyoshi Tone et al., 1998, Materials Science Forum, 264-268, 689
Online since February, 1998
Authors Kiyoshi Tone, S.R. Weiner, Jian H. Zhao
Keywords Al, C, Hall-Effect Measurement, Hole Concentration, Ion Implantation, p-Type Doping, Sheet Resistivity, Silicon Carbide (SiC), Specific Contact Resistance, Transfer Length Method
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