Paper Title:
Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation
| Periodical |
Materials Science Forum (Volumes 264 - 268)
|
| Main Theme |
Silicon Carbide, III-Nitrides and Related Materials
|
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
689-692 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.689 |
| Citation |
Kiyoshi Tone et al., 1998, Materials Science Forum, 264-268, 689 |
| Online since |
February, 1998 |
| Authors |
Kiyoshi Tone, S.R. Weiner, Jian H. Zhao |
| Keywords |
Al, C, Hall-Effect Measurement, Hole Concentration, Ion Implantation, p-Type Doping, Sheet Resistivity, Silicon Carbide (SiC), Specific Contact Resistance, Transfer Length Method |
| Price |
US$ 28,- |