Paper Title:
Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
693-696
DOI
10.4028/www.scientific.net/MSF.264-268.693
Citation
Z. C. Feng, I. T. Ferguson, R.A. Stall, K. Li, Y. Shi, H. Singh, K. Tone, J. H. Zhao, A.T.S. Wee, K.L. Tan, F. Adar, B. Lenain, "Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques", Materials Science Forum, Vols. 264-268, pp. 693-696, 1998
Online since
February 1998
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.