Paper Title:
Ion Implantation Doping in SiC and its Device Applications
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
717-720
DOI
10.4028/www.scientific.net/MSF.264-268.717
Citation
M. V. Rao, J. Gardner, A. H. Edwards, N. Papanicolaou, G. Kelner, O.W. Holland, M. Ghezzo, J. W. Kretchmer, "Ion Implantation Doping in SiC and its Device Applications", Materials Science Forum, Vols. 264-268, pp. 717-720, 1998
Online since
February 1998
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Price
$32.00
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