Paper Title:
Stoichiometric Disturbances in Ion Implanted Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
737-740
DOI
10.4028/www.scientific.net/MSF.264-268.737
Citation
E. Morvan, J. Montserrat, J. Rebollo, D. Flores, X. Jordá, M. L. Locatelli, L. Ottaviani, "Stoichiometric Disturbances in Ion Implanted Silicon Carbide", Materials Science Forum, Vols. 264-268, pp. 737-740, 1998
Online since
February 1998
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Price
$32.00
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