Paper Title:
6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
741-744
DOI
10.4028/www.scientific.net/MSF.264-268.741
Citation
T. Paskova, E. Valcheva, I. G. Ivanov, R. Yakimova, S. Savage, N. Nordell, C. I. Harris, "6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering", Materials Science Forum, Vols. 264-268, pp. 741-744, 1998
Online since
February 1998
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Price
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