Paper Title:
Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
745-748
DOI
10.4028/www.scientific.net/MSF.264-268.745
Citation
T. Ohshima, A. Uedono, H. Itoh, L. Bouwhuis, R. Suzuki, T. Ohdaira, Y. Aoki, M. Yoshikawa, T. Mikado, H. Okumura, S. Yoshida, S. Tanigawa, I. Nashiyama, "Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation", Materials Science Forum, Vols. 264-268, pp. 745-748, 1998
Online since
February 1998
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