Paper Title:
A Computational Model for the Formation of (SiC)1-x(AIN)x Structures by Hot, High-Dose N+ and Al+ Co-Implants in 6H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
757-760
DOI
10.4028/www.scientific.net/MSF.264-268.757
Citation
Y.V. Truschin, R.A. Yankov, V.S. Kharlamov, D.V. Kulikov, D.N. Tsigankov, U. Kreissig, M. Voelskow, J. Pezoldt, W. Skorupa, "A Computational Model for the Formation of (SiC)1-x(AIN)x Structures by Hot, High-Dose N+ and Al+ Co-Implants in 6H-SiC", Materials Science Forum, Vols. 264-268, pp. 757-760, 1998
Online since
February 1998
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Price
$32.00
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