Paper Title:
A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400°C in Air
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
795-798
DOI
10.4028/www.scientific.net/MSF.264-268.795
Citation
K. Gottfried, H. Fritsche, J. Kriz, J. Leibelt, C. Kaufmann, F. Rudolf, T. Gessner, "A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400°C in Air", Materials Science Forum, Vols. 264-268, pp. 795-798, 1998
Online since
February 1998
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