Paper Title:
Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
813-816
DOI
10.4028/www.scientific.net/MSF.264-268.813
Citation
H. J. Im, B. Kaczer, J.P. Pelz, J. M. Chen, W. J. Choyke, "Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy", Materials Science Forum, Vols. 264-268, pp. 813-816, 1998
Online since
February 1998
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Price
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