Paper Title:
Mechanism of Reactive Ion Etching of 6H-SiC in CHF3/O2 Gas Mixtures
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
825-828
DOI
10.4028/www.scientific.net/MSF.264-268.825
Citation
N. Sieber, J. Ristein, L. Ley, "Mechanism of Reactive Ion Etching of 6H-SiC in CHF3/O2 Gas Mixtures", Materials Science Forum, Vols. 264-268, pp. 825-828, 1998
Online since
February 1998
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Price
$32.00
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