Paper Title:
SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
83-88
DOI
10.4028/www.scientific.net/MSF.264-268.83
Citation
A. A. Burk, M. J. O'Loughlin, S.S. Mani, "SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor", Materials Science Forum, Vols. 264-268, pp. 83-88, 1998
Online since
February 1998
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Price
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