Paper Title:
Inductively Coupled Plasma Etching of SiC for Power Switching Device Fabrication
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
833-836
DOI
10.4028/www.scientific.net/MSF.264-268.833
Citation
L. H. Cao, B. Li, J. H. Zhao, "Inductively Coupled Plasma Etching of SiC for Power Switching Device Fabrication", Materials Science Forum, Vols. 264-268, pp. 833-836, 1998
Online since
February 1998
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Price
$32.00
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