Paper Title:
Deep States in SiO2/p-Type 4H-SiC Interface
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
841-844
DOI
10.4028/www.scientific.net/MSF.264-268.841
Citation
H. Yano, N. Inoue, T. Kimoto, H. Matsunami, "Deep States in SiO2/p-Type 4H-SiC Interface", Materials Science Forum, Vols. 264-268, pp. 841-844, 1998
Online since
February 1998
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Price
$32.00
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