Paper Title:
Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
849-852
DOI
10.4028/www.scientific.net/MSF.264-268.849
Citation
J. Campi, Y. Shi, Y. B. Luo, F. Yan, Y. K. Lee, J. H. Zhao, "Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC", Materials Science Forum, Vols. 264-268, pp. 849-852, 1998
Online since
February 1998
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Price
$32.00
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