Paper Title:
Interface State Density at Implanted 6H SiC/SiO2 MOS Structures
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
861-864
DOI
10.4028/www.scientific.net/MSF.264-268.861
Citation
M. Bassler, V. V. Afanas'ev, G. Pensl, "Interface State Density at Implanted 6H SiC/SiO2 MOS Structures", Materials Science Forum, Vols. 264-268, pp. 861-864, 1998
Online since
February 1998
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Price
$32.00
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