Paper Title:
Improving SiO2 Grown on P-Type 4H-SiC by NO Annealing
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
869-872
DOI
10.4028/www.scientific.net/MSF.264-268.869
Citation
H.-F. Li, S. Dimitrijev, H.B. Harrison, D. Sweatman, P.T. Tanner, "Improving SiO2 Grown on P-Type 4H-SiC by NO Annealing", Materials Science Forum, Vols. 264-268, pp. 869-872, 1998
Online since
February 1998
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Price
$32.00
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