Paper Title:
Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
877-880
DOI
10.4028/www.scientific.net/MSF.264-268.877
Citation
C. M. Zetterling, M. Östling, C. I. Harris, N. Nordell, K. Wongchotigul, M. G. Spencer, "Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures", Materials Science Forum, Vols. 264-268, pp. 877-880, 1998
Online since
February 1998
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Price
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