Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
877-880 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.877 |
| Citation |
Carl Mikael Zetterling et al., 1998, Materials Science Forum, 264-268, 877 |
| Online since |
February, 1998 |
| Authors |
Carl Mikael Zetterling, Mikael Östling, Chris I. Harris, Nils Nordell, K. Wongchotigul, Michael G. Spencer |
| Keywords |
Aluminium Nitride (AlN), Metal Organic Chemical Vapour Deposition, Silicon Dioxide, Thermal Oxidation |
| Full Paper |
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