Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
89-96 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.89 |
| Citation |
Roland Rupp et al., 1998, Materials Science Forum, 264-268, 89 |
| Online since |
February, 1998 |
| Authors |
Roland Rupp, A. Wiedenhofer, Peter Friedrichs, Dethard Peters, Reinhold Schörner, Dietrich Stephani |
| Keywords |
Avalanche Breakdown, Electrical Properties, Homogeneity, Numerical Simulation, Purity, Vapor-Phase Epitaxy (VPE), Vertical Reactor |
| Full Paper |
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