Paper Title:
Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
89-96
DOI
10.4028/www.scientific.net/MSF.264-268.89
Citation
R. Rupp, A. Wiedenhofer, P. Friedrichs, D. Peters, R. Schörner, D. Stephani, "Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications", Materials Science Forum, Vols. 264-268, pp. 89-96, 1998
Online since
February 1998
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