Paper Title:
High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
9-12
DOI
10.4028/www.scientific.net/MSF.264-268.9
Citation
G. Augustine, H. McD. Hobgood, V. Balakrishna, G. Dunne, R.H. Hopkins, R.N. Thomas, W.A. Doolittle, A. Rohatgi, "High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport", Materials Science Forum, Vols. 264-268, pp. 9-12, 1998
Online since
February 1998
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Price
$32.00
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