High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
9-12 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.9 |
| Citation |
G. Augustine et al., 1998, Materials Science Forum, 264-268, 9 |
| Online since |
February, 1998 |
| Authors |
G. Augustine, H. McD. Hobgood, Vijay Balakrishna, Greg Dunne, R.H. Hopkins, R.N. Thomas, W.A. Doolittle, A. Rohatgi |
| Keywords |
Hall-Effect, Lifetime, Semi-insulating (SI), Vanadium Doping |
| Full Paper |
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