Silicon Carbide High Frequency Devices |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
907-912 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.907 |
| Citation |
C.E. Weitzel, 1998, Materials Science Forum, 264-268, 907 |
| Online since |
February, 1998 |
| Authors |
C.E. Weitzel |
| Keywords |
Gallium Arsenide, Gallium Nitride (GaN), HFET, High Frequency, High Power FET, MESFETs, Silicon, Silicon Carbide (SiC), SITs |
| Full Paper |
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