Paper Title:
Electrothermal Simulation of 4H-SiC Power Devices
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
917-920
DOI
10.4028/www.scientific.net/MSF.264-268.917
Citation
N. G. Wright, D.J. Morrison, C. M. Johnson, A. G. O'Neill, "Electrothermal Simulation of 4H-SiC Power Devices", Materials Science Forum, Vols. 264-268, pp. 917-920, 1998
Online since
February 1998
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Price
$32.00
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