Paper Title:
High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
921-924
DOI
10.4028/www.scientific.net/MSF.264-268.921
Citation
T. Kimoto, Q. Wahab, A. Ellison, U. Forsberg, M. Tuominen, R. Yakimova, A. Henry, E. Janzén, "High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers", Materials Science Forum, Vols. 264-268, pp. 921-924, 1998
Online since
February 1998
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Price
$32.00
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