Paper Title:
Effect of Device Temperature on RF FET Power Density
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
969-972
DOI
10.4028/www.scientific.net/MSF.264-268.969
Citation
C. Weitzel, L. Pond, K. Moore, M. Bhatnagar, "Effect of Device Temperature on RF FET Power Density", Materials Science Forum, Vols. 264-268, pp. 969-972, 1998
Online since
February 1998
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Price
$32.00
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