Effect of Device Temperature on RF FET Power Density |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
969-972 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.969 |
| Citation |
C. Weitzel et al., 1998, Materials Science Forum, 264-268, 969 |
| Online since |
February, 1998 |
| Authors |
C. Weitzel, L. Pond, K. Moore, M. Bhatnagar |
| Keywords |
Field-Effect Transistor, Gallium Arsenide, HFET, High-Power High-Frequency, MESFETs, RF Power, Silicon, Simulation Modeling, Thermal Conductivity (TC) |
| Full Paper |
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